| 摘要 |
<p>A method for forming a transistor of a semiconductor device is provided to minimize the influence of an adjacent gate or passing gate by forming a drain region in a deeper portion of a substrate as compared with a source region. A gate formation region of a semiconductor substrate(100) is etched to form a groove(HR). A drain formation region of the semiconductor substrate is recessed. An ion implantation process is performed on the resultant structure to form a drain region. A silicon epitaxial layer(140) is grown on the recessed portion of the substrate so that the recessed portion of the substrate can have the same height as that of the non-recessed portion of the substrate. A gate insulation layer(142) is formed on the resultant structure. A gate conduction layer(144) and a hard mask layer(146) are sequentially formed on the gate insulation layer to fill the groove. The hard mask layer, the gate conduction layer and the gate insulation layer are etched to form a recess gate(150) on the groove. An ion implantation process is performed on the resultant structure to form a source region(160). The process for recessing the drain formation region of the substrate can include the following steps. A nitride layer is formed on the substrate including the groove, selectively exposing the drain formation region. The drain formation region is recessed.</p> |
