METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve a density and a surface roughness of a metal layer by depositing the metal layer on the whole surface of a substrate in the state that iodine is adhered to the substrate. A dielectric(210) is formed on a semiconductor substrate(200) to cover a lower structure. The dielectric is etched to form a pattern for a metal wire. A diffusion preventing barrier layer(212) is formed on the dielectric including the pattern for a metal wire. An iodine atom is adhered to the substrate surface on which the diffusion preventing barrier layer is formed. A first copper layer(220) is formed on the diffusion preventing barrier layer where the iodine atom is adhered along a profile of the pattern for a metal wire through a sputtering method. A second copper layer(230) gap-filling the pattern for the metal wire is formed on the first copper layer to form a metal wire. The pattern for a metal wire is a trench or a contact hole.