| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a low-cost high-efficiency integrated photovoltaic device the semiconductor layer of which is not damaged thermally and, in additions, has an excellent separation characteristic even when the layer has a thin thickness. SOLUTION: This integrated photovoltaic device is provided with a transparent conductive film 2 which is divided into a plurality of photoelectric conversion element areas on one main surface of a transmissive insulating substrate 1, an amorphous semiconductor layer 3 divided into the plurality of photoelectric conversion element areas on the conductive film 2, and a rear electrode film 4 provided on the semiconductor layer 3 divided into the areas by projecting a laser beam from the other main surface side of the substrate 1. The electrode film 4 has one or more sets of thin metallic layers 42 and 42 and a thin amorphous layer 43 interposed between the layers 42 and containing hydrogen or a rare gas.</p> |
