| 摘要 |
A method for fabricating a semiconductor device is provided to avoid oxidation of a cut portion of a fuse and cracks caused by the oxidation by cutting a fuse for a repair process and by forming a predetermined material layer in the cut portion. A fuse region(210) is formed on a substrate(21), including a fuse(23) and an insulation layer of a predetermined thickness formed on the fuse. The fuse is cut. A predetermined material layer is formed on the fuse region to isolate the cut fuse from the outside. The process for forming the fuse region can include the following steps. A first interlayer dielectric(22) including the fuse is formed on the substrate. A first metal interconnection(24) is formed on the first interlayer dielectric. A second interlayer dielectric(25) is formed on the first interlayer dielectric including the first metal interconnection. A contact plug(26) penetrates the second interlayer dielectric to come in contact with the first metal interconnection. A second metal interconnection(27) in contact with the contact plug is formed on the second interlayer dielectric. A passivation layer(28) and a PIQ(polyimide isoindoro quinazorindione) layer(29) are formed on the resultant structure. The passivation layer, the PIQ layer and their underlying structure are etched until the first interlayer dielectric of a predetermined thickness remains on the fuse.
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