| 摘要 |
<p>A thin film transistor device and a manufacturing method thereof are provided to prevent degradation of an insulation film due to doping by forming a lower electrode of a capacitor using a low-resistance metal film pattern. A thin film transistor device includes a metal film pattern(4), a gate insulation film(5), an interlayer dielectric(7), and a signal line(9). The metal film pattern is formed by patterning a metal film, such that the metal film pattern covers at least a portion of a source/drain region of a semiconductor layer from a position, which is apart from a channel region by at least one micrometer. The semiconductor layer is formed in an island-like shape. The gate insulation film covers the island-type semiconductor layer and the metal film pattern. The interlayer dielectric covers the gate insulation film. The signal line is formed on the interlayer dielectric. A contact hole is formed on the gate insulation film and the interlayer dielectric to reach the metal film pattern. The signal line is connected to the metal film pattern through the contact hole.</p> |
