| 摘要 |
A low-voltage thin-film field-effect transistor is formed by forming a gate, forming a dielectric layer on the surface of the gate, forming a source region and a drain region, and forming a semiconductor layer adjacent the dielectric layer. The dielectric layer is formed as a native oxide layer by oxidizing the surface of the gate. The semiconductor layer is deposited by spray pyrolysis. The dielectric layer may be functionalized with a self-assembling monolayer dielectric layer. The dielectric layer may be formed as a self-assembling monolayer, without first forming a native oxide (or other) dielectric layer. |
