| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for improving breakdown resistance of a MOSFET and a diode, etc. SOLUTION: In a transistor 1, a height of guard ring parts 25<SB>1</SB>-25<SB>3</SB>is higher than that of buried parts 26a and 26b. Especially a breakdown voltage of the guard ring parts 25<SB>1</SB>-25<SB>3</SB>is higher than that of the buried parts 26a and 26b if a top part of the guard ring parts 25<SB>1</SB>-25<SB>3</SB>is extended to the inside of an insulating film 43. Therefore, since breakdown occurs in an active region, causing an breakdown current to flow through the active region having a large area, current concentration does not occur, and a breakdown resistance of an element is increased. Similarly, a top part of a guard ring part provided in a diode can be extended to the inside of the insulating film. COPYRIGHT: (C)2004,JPO |
