METHOD OF MANUFACTURING CONTACT

摘要

A method for forming a contact of a semiconductor device is provided to reduce generation of stepped parts in a planarization process by securing a uniform polishing speed in DC contact regions of different thicknesses or different widths. A semiconductor substrate(110) including a first DC(Different Contact) region and a second DC region having a line width different from a line width of the first DC region is prepared. An element layer(120) and an insulating layer(130) are formed on the semiconductor substrate. A first mask pattern(140) including a first contact pattern part of the first DC region and a second contact pattern part of the second DC region is formed on the insulating layer. A sacrificial layer(150) having a thickness for defining a width of a contact and a groove corresponding to the first DC region is formed on the insulating layer. A second mask pattern(160) is formed to bury the groove of the sacrificial layer. A third mask pattern is formed on the sacrificial layer and the second mask pattern to expose a contact region of the first and second DC regions. A first and second contact holes are formed in the first and second DC regions, respectively. The third mask pattern is removed. A conductive layer is formed on the semiconductor substrate to bury the first and second contact holes. A planarization process is performed to planarize the insulating layer.