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发明名称
NITROGEN BASED IMPLANTS FOR DEFECT REDUCTION IN STRAINED SILICON
摘要
申请公布号
EP1955372(A2)
申请公布日期
2008.08.13
申请号
EP20060839704
申请日期
2006.11.03
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
CHAKRAVARTHI, SRINIVASAN;CHIDAMBARAM, P, R.;KHAMANKAR, RAJESH;BU, HAOWEN;GRIDER, DOUGLAS, T.
分类号
H01L21/31;H01L21/265;H01L23/58;H01L29/06;H01L29/40
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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