发明名称 Buffer circuit having electrostatic discharge protection
摘要 The pull-up and pulldown sections in each output buffer are fed from separate power rails 40,46;42,48;44,50 so that a positive ESD impulse on any I/O pad cannot couple through the pull-up circuit MP10 to the gate of the pull-down cascode device MNA and cause gate voltage induced current crfowding (GVICC). The pulldown circuit in each block shares a common supply with the pullup circuits in adjacent blocks. Positive ESD impulses on the I/O pad may be discharged to Earth by parasitic lateral NPN transistors associated with the pulldown transistors (figure 2).
申请公布号 GB2445327(B) 申请公布日期 2008.08.13
申请号 GB20080006766 申请日期 2004.12.30
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 CHAN-HEE JEON;BONG-JAE KWON;EUN-KYOUNG KWON
分类号 H01L27/02;H01L27/04;H03K19/003;H03K19/0185 主分类号 H01L27/02
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