| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to prevent the warpage of a semiconductor substrate by restraining a void and a nonuniform groove. A hard mask exposing an isolation region is formed on a semiconductor substrate(400) having an active region and the isolation region. The exposed isolation region of the semiconductor substrate is etched by using the hard mask as an etching barrier to form a trench(T). An SOG(Spin-On-Glass) layer(408) is formed in the trench. The depth of the SOG layer is lower than that of an upper surface of the trench. A vacuum state is maintained to remove minute bubbles in the SOG layer. A thermal treatment is performed on the SOG layer whose minute bubbles therein are removed. An HDP(High Density Plasma) layer(410) is formed on the SOG layer to gap-fill the trench. CMP(Chemical Mechanical Polishing) is performed on the HDP layer until the hard mask is exposed. The hard mask is removed.
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