发明名称 |
METHOD FOR MANUFACTURING (110) SILICON WAFER |
摘要 |
<p>The present invention provides a method for slicing a silicon single crystal ingot having a plane direction (110) by a wire saw to manufacture a (110) silicon wafer, wherein slicing is performed in such a manner that each angle formed between a traveling direction of a wire in the wire saw and a [-112] direction and a [1-12] direction in the (110) silicon single crystal ingot or a direction crystallographically equivalent to the directions exceeds 30°. As a result, the method for manufacturing the (110) silicon wafer that can suppress occurrence of breaking at the time of slicing and improve a production yield ratio can be provided.</p> |
申请公布号 |
EP1955813(A1) |
申请公布日期 |
2008.08.13 |
申请号 |
EP20060797349 |
申请日期 |
2006.09.04 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
OISHI, HIROSHI |
分类号 |
B28D5/04;B24B27/06;H01L21/304 |
主分类号 |
B28D5/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|