| 摘要 |
<p>A method for forming a gate of a semiconductor device is provided to avoid a gate leaning phenomenon by previously forming a capping nitride layer on the sidewall of a barrier layer and a metal layer before a gate formation process is performed. A groove can be formed in a semiconductor substrate(300) having a gate formation region. A gate insulation layer(304), a polysilicon layer(306) and a mold insulation layer are formed on the semiconductor substrate. The mold insulation layer is etched to form a trench exposing a portion of a polysilicon layer in the gate formation region. A capping layer(318) is formed on the sidewall of the trench. A barrier layer(308) is formed on the mold insulation layer, the capping layer and the polysilicon layer. A metal layer(310) is formed on the barrier layer to fill the trench. The metal layer and the barrier layer are removed. A hard mask layer(312) is formed on the capping layer, the metal layer and the mold insulation layer, covering the gate formation region. The mold insulation layer, the polysilicon layer and the gate insulation layer are etched by using the hard mask layer.</p> |
