| 摘要 |
Islands of selectively epitaxially grown (SEG) silicon 34 are formed in openings in an insulating layer 32 formed on a semiconductor substrate 30. Transistors for an RF device are formed in the SEG silicon. Alternatively, a customisable RF IC device is fabricated by forming transistor devices and transistor device isolation regions only. Subsequently, customized circuits may be formed by fabricating additional circuit layers. |
