THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A TFT(thin film transistor) display panel is provided to prevent silicon ions from being diffused to the inside of a copper wire by depositing an insulation layer at a temperature of around 280 °C or by depositing a general SiNx layer after a high-density N-rich SiNx layer is formed. A gate electrode(124) is formed on a substrate(110), including metal that combines with silicon to form silicide. Silicon-containing gas is supplied at a temperature of 280 °C or lower to form a gate insulation layer(140) on the gate electrode. A semiconductor(151,154) is formed on the gate insulation layer. A data line(171) and a drain electrode(175) are formed on the semiconductor. A pixel electrode(191) is connected to the drain electrode. The gate line can include copper. The gate insulation layer can be made of SiNx.