摘要 |
Semiconductor fabricating equipment is provided to protect an electrostatic chuck by temporarily shielding the electrostatic chuck from a plasma reaction in performing a dry cleaning process on a reaction chamber. A reaction chamber(110) provides a space sealed from the outside. A shower head(120) injects reaction gas, installed in the upper end of the reaction chamber. A plasma electrode(130) induces a plasma reaction by using the process gas injected from the shower head. An electrostatic chuck(140) supports a wafer, installed in the lower end of the reaction chamber facing the plasma electrode and the shower head. A plasma reaction shielding unit(150) temporarily shields the electrostatic chuck from the plasma reaction to protect the electrostatic chuck in cleaning the reaction chamber by the plasma reaction after the wafer is removed from the electrostatic chuck. The plasma reaction shielding unit can include a flat plate and a rotation part. The flat plate has a predetermined area for covering the upper portion of the electrostatic chuck. The rotation part rotates the flat plate at a predetermined azimuth angle to seal or open the upper portion of the electrostatic chuck by the flat plate.
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