| 摘要 |
In a semiconductor storage device with cross point type arrays of memory cells including variable resistor elements, a selected data line and unselected data lines are supplied with a row selecting potential and a row unselecting potential through a data line selecting transistor respectively, a selected bit line and unselected bit lines are supplied with a column selecting potential and a column unselecting potential through a bit line selecting transistor respectively. Data lines and bit lines are separately driven so that when the data line selecting transistor is higher in the current driving capability than the bit line selecting transistor, a second bias voltage between the row unselecting potential and column selecting potential is lower than a first bias voltage between the row selecting potential and column unselecting potential, in the opposite case, the first bias voltage is lower than the second voltage.
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