THIN FILM TRANSISTOR, FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME

摘要

A TFT(thin film transistor) is provided to maximize the effect of protecting a device by forming a passivation layer for minimizing thermal damage and various damage conditions. A gate electrode(110) is formed on a substrate(100). A gate insulation layer(120) is formed on the substrate to cover the gate electrode. A semiconductor layer(130) is formed on the gate insulation layer to correspond to a predetermined region of the gate electrode. A source electrode(140a) and a drain electrode(140b) are connected to a predetermined region of the semiconductor layer. A passivation layer(150) is formed to cover the semiconductor layer, the source electrode and the drain electrode. At least one of the gate insulation layer or the passivation layer includes a fluorine-based polymer material. A first electrode can be formed on the passivation layer, penetrating the passivation layer to be electrically connected to the source electrode and the drain electrode. A second electrode can face the first electrode. A liquid crystal layer or an organic light emitting layer can be positioned between the first and second electrodes.