发明名称 Methods of manufacturing metal oxide nanowires
摘要 Metal oxide nanowires are being investigated to make nanodevices and nanosensors. High operation temperatures or vacuum is required in the manufacturing of metal oxide nanowires by existing vapor phase evaporation methods. This invention provides a method of manufacturing metal oxide nanowires by first providing a metal to form a non-linear substantially planar structure defining a surface. The metal is then heated and maintained at a temperature from 300 to 800° C., and then exposed to oxygen and water vapor containing air stream for a sufficient period of time to form the metal oxide nanowires. The oxygen containing air stream flows in a direction substantially parallel to the plane of the structure. Relatively low temperatures may be used and no vacuum is required in this method, thereby reducing the overall manufacturing costs. Further, this method is able to manufacture different densities of the metal oxide nanowires simultaneously.
申请公布号 US7410912(B2) 申请公布日期 2008.08.12
申请号 US20050217483 申请日期 2005.09.02
申请人 THE HONG KONG POLYTECHNIC UNIVERSITY 发明人 XU CHUNHUA;SHI SAN-QIANG;LIU YANG;WOO CHUNG HO
分类号 H01L21/31;H01L21/469 主分类号 H01L21/31
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