发明名称 |
Thin film transistor and manufacturing method thereof |
摘要 |
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes high-speed operation and high-performance of the semiconductor device and a manufacturing method thereof. Further in addition, it is an object of the present invention to provide a manufacturing method in which a manufacturing process is simplified. The semiconductor device of the present invention has an island-shaped semiconductor film formed over a substrate having an insulating surface and a gate electrode formed over the island-shaped semiconductor film, in which the gate electrode is oxidized its surface by high-density plasma to be slimmed and the substantial length of a channel is shortened.
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申请公布号 |
US7410839(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20060410071 |
申请日期 |
2006.04.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO;YAMAZAKI SHUNPEI |
分类号 |
H01L21/84;H01L21/00;H01L21/336;H01L21/8234 |
主分类号 |
H01L21/84 |
代理机构 |
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地址 |
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