| 发明名称 |
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
| 摘要 |
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
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| 申请公布号 |
US7410890(B2) |
申请公布日期 |
2008.08.12 |
| 申请号 |
US20050150698 |
申请日期 |
2005.06.11 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/34;H01L21/265;H01L21/38 |
主分类号 |
H01L21/34 |
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代理人 |
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| 主权项 |
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