发明名称 Metal nitride carbide deposition by ALD
摘要 The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.
申请公布号 US7410666(B2) 申请公布日期 2008.08.12
申请号 US20050286203 申请日期 2005.11.22
申请人 ASM INTERNATIONAL N.V. 发明人 ELERS KAI;LI WEI-MIN
分类号 B05D5/12;C23C16/34;C23C16/00;C23C16/32;C23C16/36;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/3205;H01L21/44;H01L21/768;H01L23/52;H01L23/532 主分类号 B05D5/12
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