发明名称 |
Radiation-hardened silicon-on-insulator CMOS device, and method of making the same |
摘要 |
A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
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申请公布号 |
US7411250(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20040846864 |
申请日期 |
2004.05.13 |
申请人 |
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发明人 |
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分类号 |
H01L27/01;H01L21/86;H01L27/12 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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