| 摘要 |
<p>A semiconductor device is provided to avoid deterioration of an operation speed by preventing the coupling ratio of a memory cell from being lowered. A semiconductor device includes a semiconductor substrate(1) and a plurality of non-volatile memory cells formed on the substrate. A channel region having a channel length and a channel width is formed on the substrate. A tunnel insulation layer is formed on the channel region. A floating gate electrode(3) is formed on the tunnel insulation layer. A control gate electrode(5) is formed on the floating gate electrode. An inter-electrode insulation layer is formed between the floating gate electrode and the control gate electrode. An electrode sidewall insulation layer is formed on the sidewall of the floating gate electrode and the control gate electrode. The electrode sidewall insulation layer has a first insulation layer of a first dielectric constant and a second insulation layer of a second dielectric constant, wherein the first dielectric constant is higher than the second dielectric constant and the second dielectric constant is higher than a dielectric constant of a silicon nitride layer. The first insulation layer is formed in the central region of a confrontation region of the floating gate electrode and the control gate electrode. The second insulation layer is formed in both end regions of the confrontation region, protruding to the outside of the both end regions. The central region is a region except the both end regions from the confrontation region.</p> |
