| 摘要 |
A method for controlling a data line in a semiconductor memory device is provided to prevent or minimize sensing fail during a write operation and a continuous read operation. According to a method for controlling a data line in a semiconductor memory device, a first write operation is performed by inputting data through first data lines among data lines performing interleaving with each other. A second write operation is performed by inputting external data through second data lines except the first data lines, and the data during the first write operation is latched and supplied to the first data lines continuously at the same time. A read operation is performed through the first data lines. The data lines are global input/output lines(GIO) or local input/output lines(LIO). The first data lines and the second data lines are enabled by a column address at the same time.
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