| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to improve reliability by maintaining uniformly a threshold voltage of a memory cell within the same string. A non-volatile memory device includes a plurality of memory cells connected serially to each other, a plurality of word lines(WL0-WL4) connected to the memory cells, and a plurality of spacers inserted between the word lines. The spacers have different dielectric constants along the line widths of the word lines. The spacer inserted between the word lines having the relatively large line widths has the low dielectric constant in comparison with the spacer inserted between other spacers. In a sequential write operation for the memory cells, the final write operation is performed in the word line having the relatively large line width in comparison with other word lines.</p> |
