PLASMA TREATMENT OF A SEMICONDUCTOR SURFACE FOR ENHANCED NUCLEATION OF A METAL-CONTAINING LAYER

摘要

A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate (10) to expose a surface (16) of the semiconductor surface, wherein the exposed surface (16) is hydrophobic. The method may further include treating the exposed surface (16) of the semiconductor substrate (10) with plasma to neutralize a hydrophobicity associated with the exposed surface, wherein the exposed surface is treated using plasma with a power in a range of 100 watts to 500 watts and for duration in a range of 1 to 60 seconds. The method may further include forming a metal-containing layer (30) on a top surface of the plasma treated surface using an atomic layer deposition process.