发明名称 |
Uniform contact |
摘要 |
A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting point contact material may comprise aluminum. In another embodiment a substantially uniform ohmic contact may be formed between a contact material and a semiconductor material by annealing the contact at a temperature less than the melting point of the contact material. In an embodiment, the contact may be annealed for more than five hours.
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申请公布号 |
US7411219(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20050190654 |
申请日期 |
2005.07.27 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
WOODIN RICHARD L.;SENG WILLIAM F. |
分类号 |
H01L21/02;H01L21/28;H01L21/04;H01L29/24;H01L29/45 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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