| 摘要 |
<p>A driving method of a non-volatile memory device is provided to store two bits data in each unit cell of the non-volatile memory device using a RCAT(Recessed Channel Array Transistor) structure. A non-volatile memory device has a RCAT(Recessed Channel Array Transistor) structure. The RCAT structure has a trench formed on a substrate(201), a charge trap region formed on the trench, a gate(205) formed on the charge trap region and a source(206) and a drain(207) formed on the left and right of the trench. According to a driving method of the non-volatile memory device, a drain side charge trapping step traps charges in charge trap regions(202,203,204) in the drain side. A source side charge trapping step traps charges in charge trap regions in the source side. In the drain side charge trapping step, a voltage applied to the gate is larger than a voltage applied to the drain.</p> |
