发明名称 |
Method of forming a nanowire and method of manufacturing a semiconductor device using the same |
摘要 |
In a method of forming a nanowire in a semiconductor device, a trench is formed by partially etching a bulk semiconductor substrate. An insulation layer pattern is formed on the substrate to fill up the trench. The insulation layer pattern covers a first region of the substrate where the nanowire is formed, and additionally covers a second region of the substrate connected to the first region. An opening is formed by etching an exposed portion of the substrate by the insulation layer pattern. A spacer is formed on sidewalls of the opening and the insulation layer pattern. The nanowire connected to the second region is formed by anisotropically etching a portion of the substrate exposed by the opening until a portion of the insulation layer pattern formed in the trench is exposed.
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申请公布号 |
US7410853(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20060431216 |
申请日期 |
2006.05.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN YOUNG-JOON;LEE CHOONG-HO;LEE CHUL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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