| 摘要 |
<p>A method for fabricating a semiconductor device is provided to suppress generation of a moat by avoiding loss of an isolation layer. A groove is formed in a gate formation region of a semiconductor substrate having an isolation layer formation region and the gate formation region. A hard mask pattern is formed on the semiconductor substrate including the groove, exposing the isolation layer formation region. The semiconductor substrate is etched to form a trench by using the hard mask pattern as an etch barrier. An insulation layer(208) is filled in the trench to form an isolation layer. The hard mask pattern is removed. A gate insulation layer(210), a gate conduction layer and a gate hard mask are sequentially formed on the resultant structure. The gate hard mask, the gate conduction layer and the gate insulation layer are etched to form a gate on the groove. The hard mask pattern can be composed of a pad oxide layer and a pad nitride layer.</p> |
