SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a forming method thereof are provided to maintain constantly operational characteristics by reducing a change of threshold voltages. A hydrogen projection layer(25) is formed on a surface of a substrate(10) by implanting hydrogen ions into the substrate. A gate structure(30) including a first insulating layer(31), an electric charge storage layer(32), a second insulating layer(33), and a conductive layer(34) is laminated on the hydrogen projection layer. The density of the projected hydrogen ions is 10^14-10^17/cm^2. The depth of the projected hydrogen ions is 1000 Å. A sub-substrate is formed by cutting the hydrogen projection layer before the gate structure is formed on the hydrogen projection layer.