发明名称 SEMICONDUCTOR DEVICE FOR COMMON SOURCE LINE AND METHOD OF FABRICATION THE SAME
摘要 <p>A semiconductor device for a common source line and a manufacturing method thereof are provided to prevent an active region of a semiconductor substrate from being recessed by forming a spacer without performing an etching process. A semiconductor device for a common source line(CSL) includes a semiconductor substrate(100), plural ground select lines(GSL), plural word lines(WL), and a spacer insulation film(103). The ground select lines are separated from the word lines. The ground select lines and the word lines are opposed to each other. The spacer insulation film covers plural ground select lines and the word lines. The spacer insulation film covers the semiconductor substrate between the ground select lines at a uniform thickness. An etching stopper film(104) is formed on the spacer insulation film.</p>
申请公布号 KR20080073580(A) 申请公布日期 2008.08.11
申请号 KR20070012350 申请日期 2007.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAN, DAE GYU
分类号 H01L27/115;H01L21/28;H01L21/8247 主分类号 H01L27/115
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