发明名称 INFORMATION STORAGE MEDIA USING NANOCRYSTAL, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIA, AND INFORMATION STORAGE APPARATUS
摘要 An information storage medium, a method of manufacturing the same, and an information storage apparatus are provided to trap electric charges by using conductive nanocrystal so as to secure high recording density more than 1Tb/in^2, and to form a recording layer at a low temperature. An information storage medium comprises a conductive layer(112), a lower insulating layer(114), a nanocrystal layer(120), and an upper insulating layer(124). The lower insulating layer is formed on the conductive layer. The nanocrystal layer, which is formed on the lower insulating layer, includes conductive nanocrystal(121) for trapping electric charges. The upper insulating layer is formed on the nanocrystal layer. The nanocrystal layer is formed with a monolayer or a multilayer.
申请公布号 KR20080073589(A) 申请公布日期 2008.08.11
申请号 KR20070012369 申请日期 2007.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, SEUNG BUM;BUEHLMANN SIMON;JUN, SHIN AE;CHOA, SUNG HOON;JANG, EUN JOO;KIM, YONG KWAN
分类号 G11B9/08;G11B5/66;G11B9/00 主分类号 G11B9/08
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