| 摘要 |
An image sensor and a manufacturing method thereof are provided to reduce a process cost necessary for improving resolution by integrating vertically transistor circuits and photodiodes. A CMOS circuit including an external wiring(120) is formed on a substrate(110). A first electrode(140), an intrinsic layer(170), and a conducting layer(180) of a second conductive type, and a second electrode(190) are formed on the substrate. A via hole is formed in a boundary of a pixel to isolate the first electrode, the intrinsic layer, the conducting layer of the second conductive type, and the second electrode from each other. A light absorption layer(200) is formed in the via hole. An interlayer dielectric(160) is formed on the light absorption layer to bury the via hole.
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