| 摘要 |
<p>A photolithography method using a scattering bar pattern of dual tone is provided to secure a wide exposure energy margin by setting independent optimum exposure conditions. A first exposure process is performed on a wafer coated with a photoresist layer by using a first photomask including a main pattern(S30). A second exposure process is performed on the wafer by using a second photomask having an auxiliary pattern(S40,S50). The auxiliary pattern is a scattering bar pattern. The scattering bar pattern is extended in the same direction as the direction of the main pattern. The scattering bar pattern is equal to the main pattern or is opposite to the main pattern. The first photomask is a phase shift mask.</p> |
