METHOD OF SINGLE-CRYSTALLINE ALUMINIUM NITRIDE GROWING AND DEVICE FOR ITS IMPLEMENTATION

摘要

FIELD: technological processes. ^ SUBSTANCE: invention is related to growing crystals from vapors, in particular to growing of aluminium nitride single crystals by condensation of evaporated and sublimated material. Method includes installation of base and aluminium vapors source opposite to each other in growing chamber, heating and maintenance of working temperatures. In order to balance atmosphere inside the growing chamber heating and maintenance of working temperatures is performed in atmosphere of aluminium and nitrogen vapors mixture from external side of growing chamber. For that purpose device for single-crystalline aluminium nitride growing additionally contains external crucible with cover for installation of growing chamber in it, in which aluminium vapors source is placed. ^ EFFECT: application of suggested method and device for growing of single-crystalline aluminium nitride allows to increase amount of proper crystals of aluminium nitride and to increase their quality. ^ 2 cl, 1 dwg