| 摘要 |
FIELD: physics. ^ SUBSTANCE: photo-converter with a bilateral working surface made from plates of silicon contains diode structures with n+-p (p+-n) transition to the frontal surface of a silicon plate and isotypic p-p+ (n-n+) transitions to the base area on a back surface of a silicon plate at which the areas and configurations of metallic contacts on frontal and back surfaces coincide with the plan, and the thickness of the photo-converter is commensurable with the diffusion length of the minor carriers of current in the base region. The diode structures are made in the form of separate commuted contact sections combined into the plan on the front and back surfaces with the sites on which contacts are put. The distance between separate neighbouring sections with n+-p (p+-n) transition on the front surface does not exceed double the diffusion length of the minor carriers of current in the base region, and on the frontal surface, free from n+-p (p+-n) transition, and on the back surface, free from contacts, a passivating, anti-reflecting is located. In the second version the said photo-converter has the same construction as in the first variant and additionally on the passivating anti-reflecting film from the front and back sides are situated nano-clusters with the linear size of 10-100 nm from the metallic atoms, the distance between which 2-4 times exceeds the sizes of the nano-clusters. Methods of manufacturing of both variants of photo-converters are also proposed. ^ EFFECT: reduction in the cost and increase in efficiency of photo-converters. ^ 5 cl, 3 dwg |
