| 摘要 |
<p>A method of manufacturing a TFT(Thin Film Transistor) is provided to increase an integration scale of the TFT by generating a nano wire using an aluminum anodized film as a template. A source electrode(11), a source region ohmic semiconductor layer(12), an insulation layer(13), and a drain region ohmic semiconductor layer(14) are formed on a glass substrate(10). A nano wire generating template is formed on the source electrode. A channel material is deposited on the template, such that one dimensional nano wire array is formed. A drain electrode(17), a gate insulation film(18), and a gate electrode(19) are formed on the nano wire array. The 1D nano wire array(20) is exposed.</p> |
