METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING DUAL DAMASCENE PROCESS AND METHOD FOR MANUFACTURING ARTICLE HAVING COMMUNICATING HOLE,申请号KR20060122876-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING DUAL DAMASCENE PROCESS AND METHOD FOR MANUFACTURING ARTICLE HAVING COMMUNICATING HOLE
摘要
申请公布号	KR100851448(B1)	申请公布日期	2008.08.08
申请号	KR20060122876	申请日期	2006.12.06
申请人		发明人
分类号	H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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