| 摘要 |
A method for forming a multilayer metal line of a semiconductor device is provided to improve electrical reliability of the metal line by forming a metal contact in a contact hole without voids. An interlayer dielectric is formed on a semiconductor substrate(200), on which a lower metal line(202) is formed. The interlayer dielectric is etched, such that a contact hole(H) for exposing the lower metal line is formed. A first barrier film(210) is formed on a surface of the contact hole and the interlayer dielectric. The first barrier film is blanket-etched, such that the first barrier film remains only on the sidewall of the contact hole. A second barrier film(212) is formed on the surface of the contact hole containing the first barrier film, and the interlayer dielectric. An upper line metal film(214) is formed on the second barrier film, such that the contact hole is buried.
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