| 摘要 |
A semiconductor light emitting element having improved light extracting efficiency and a method for manufacturing a semiconductor light emitting element are provided. The semiconductor light emitting element (1) is provided with a supporting substrate (2), and a semiconductor laminated structure (6) which includes an MQW active layer (13) which emits light and a topmost n-GaN layer (14). On an upper plane of the n-GaN layer (14) of the semiconductor laminated structure (6), a plurality of cone-shaped protruding sections (14a) are formed. The protruding sections (14a) are formed so that the average value (WA) of the width (W) of a bottom plane of the protruding section (14) satisfies an inequality of WA>=U/n, where U is the wavelength of light emitted from the MQW active layer and n is the refraction index of the n-GaN layer (14).
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