METHOD AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR

摘要

A method and an apparatus for manufacturing a semiconductor device are provided to increase a stress applied on a sidewall by contacting a stress liner along a surface of an amorphous region. A first layer(23) and a second layer(25) are formed on a semiconductor substrate. The first layer has a first crystal direction, while the second layer has a second crystal direction, which is different from the first crystal direction. A portion of the second layer is turned into an amorphous region. An external stress is applied on the second layer. The second layer is heated to a temperature higher than a re-crystallization temperature of the second layer. When the external stress is applied on the second layer, a stress liner is formed. A twisting force is applied on the second layer and a trench is formed in the semiconductor substrate.