METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve stability of an interlayer dielectric and to enhance mechanical strength by forming the interlayer dielectric for insulating metal lines from each other. An amorphous carbon layer is formed on a semiconductor substrate(210) including a contact plug(230) and an insulating layer(220). A trench for defining a metal line region is formed by etching the amorphous carbon layer. A metal line(270) is formed in the inside of the trench. A surface of the metal line is processed. The amorphous carbon layer is removed. An interlayer dielectric(280) is formed on the entire surface of the semiconductor substrate in order to insulate the metal lines from each other.