| 摘要 |
A semiconductor device has a Si substrate, a gate insulating film over the Si substrate, a gate electrode over the gate insulating film, a source region and a drain region in the Si substrate, wherein each of the source region and the drain region includes a first Si layer including Ge, an interlayer over the first Si layer, and a second Si layer including Ge over the interlayer, wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer.
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