Separating a dielectric material comprises forming a first layer using a first and second precursor, on the conductive section of the substrate and forming a second layer using the first and third precursor on the first layer

摘要

Separating a dielectric material with a transition metal comprises providing a substrate (1) with at least a conductive section on the surface; sequentially using a first precursor (3) containing a transition metal compound and a second precursor (4) containing water vapor, ammonia and/or hydrazine, on the conductive section for the formation of a first layer from the transition metal containing material; and sequentially using the first precursor and a third precursor containing ozone and/or oxygen, on the first layer for forming a second layer from the transition metal containing material. Independent claims are included for: (1) a capacitor structure comprising a first electrode formed from titanium, titanium compounds, titanium nitride, carbon, tantalum nitride, tantalum carbide, tungsten, ruthenium, ruthenium oxide, iridium, iridium oxide and/or platinum, at least two dielectric layers (2) of hafnium oxide and/or zirconium oxide, which are doped with a doping agent, a layer, which is formed from a doping agent, that separates the two dielectric layers, and a counter electrode, which is arranged on the second dielectric layer; and (2) a semiconductor storage device comprising multiple storage cells, that respectively exhibits a capacitor structure.