| 发明名称 |
Semiconductor device, has drift zone and drift control zone, which is arranged adjacent to drift zone and which is dielectrically isolated by dielectric layer, opposite to drift zone |
| 摘要 |
<p>The semiconductor device has a drift zone (12) and a drift control zone (20), which is arranged adjacent to the drift zone and which is dielectrically isolated by a dielectric layer (24), opposite to the drift zone. The drift control zone has two semiconductor layers. The former semiconductor layer has a higher charge carrier mobility than the latter semiconductor layer. An independent claim is also included for method for manufacturing a limiting drift control zone by a dielectric layer.</p> |
| 申请公布号 |
DE102007004090(A1) |
申请公布日期 |
2008.08.07 |
| 申请号 |
DE20071004090 |
申请日期 |
2007.01.26 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SEDLMAIER, STEFAN;MAUDER, ANTON;WILLMEROTH, ARMIN;HIRLER, FRANZ |
| 分类号 |
H01L29/78;H01L29/739 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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