METHOD FOR PRODUCING CUBICAL GaN FILMS ON SUBTRACTS OF A POROUS GaAs LAYER

摘要

The invention relates to the production of semiconductor devices, in particular to epitaxial growth methods and can be used for developing semiconductor lasers: light-emitting diodes operating in the ultra-violet spectral range. The inventive method for producing cubical GaN films on subtracts based on a porous GaAs layers consists in displacing the maximum of the operating frequency range of the films towards high (ultra-violet) frequencies. The invention makes it possible to solve one of the most important problems of modern optoelectronics consisting in producing materials, the operating frequency range of the films of which is situated in the high frequency region, by means of a low-cost method.