STRUCTURE FOR FORMING A GATE OXIDE OF A POWER DEVICE

摘要

A structure for forming a gate oxide of a power device is provided to optimize a drain current value by forming a stepped part at the gate oxide of the power device. A source(110) and a drain(130) are positioned on a silicon substrate(100). An LDD(170) is formed at a part adjacent to a gate oxide(200). An STI(Shallow Trench Isolation) structure(140) is formed in a drain region to isolate the adjacent part. A gate(190) is formed on an upper surface of the gate oxide. A stepped part is formed by etching selectively the gate oxide layer formed between the source and the drain. The source is thinner than the drain. The gate oxide is formed with three or more stepped parts.