THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

A thin film transistor provided with three electrodes of a source electrode, a drain electrode, and a gate electrode; a channel layer; and a gate insulating layer, wherein at least the channel layer is made of metallic oxide including indium. With this, it is possible to manufacture such elements on a high polymer substrate without applying a high temperature process, and a thin film transistor configured to achieve low costs, high performance and high reliability can be obtained.